Title :
Analysis of Transient Radiation Upset in a 2K SRAM
Author :
Massengill, L.W. ; Diehl-Nagle, S.E. ; Wrobel, T.F.
Author_Institution :
North Carolina State University Raleigh, NC 27695-7911
Abstract :
Experimental characterization of the effects of power supply interconnect resistance on the transient radiation induced upset level of a 2K SRAM and correlations with rail span collapse simulations are presented. The results show that the dose-rate upset threshold increases if columns of RAM cells are isolated from the Vss supply grid. The magnitude of this increase is predicted well by computer simulations.
Keywords :
Circuit simulation; Computational modeling; Integrated circuit interconnections; Photoconductivity; Power supplies; Rails; Random access memory; Read-write memory; Transient analysis; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4334062
