DocumentCode
881134
Title
GaAs MMIC Technology Radiation Effects
Author
Anderson, W.T. ; Simons, M. ; Christou, A. ; Beall, J.
Volume
32
Issue
6
fYear
1985
Firstpage
4040
Lastpage
4045
Abstract
A comprehensive study was made of radiation effects in the component devices that comprise a particular technology developed by Texas Instruments for GaAs MMICs. Total dose, transient, and neutron radiation effects were measured in FETs. Transient effects were measured in capacitors, resistors, Schottky barrier diodes and the MWICs. Results are compared with predictions of radiation effects models.
Keywords
Capacitors; FETs; Gallium arsenide; Instruments; MMICs; Neutron radiation effects; Radiation effects; Resistors; Schottky barriers; Schottky diodes;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1985.4334065
Filename
4334065
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