DocumentCode
881220
Title
New analysis of f.e.t. saturation
Author
Luque, Antonio
Volume
5
Issue
17
fYear
1969
Firstpage
420
Lastpage
422
Abstract
A new study of the saturation phenomenon of a junction, f.e.t. including the rise of voltage outside the channel, is proposed. This study is based on an approximate solution of the bidimensional Poisson equation with appropriate boundary conditions. Experimental evidence is also presented.
Keywords
field effect transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690317
Filename
4210537
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