• DocumentCode
    881220
  • Title

    New analysis of f.e.t. saturation

  • Author

    Luque, Antonio

  • Volume
    5
  • Issue
    17
  • fYear
    1969
  • Firstpage
    420
  • Lastpage
    422
  • Abstract
    A new study of the saturation phenomenon of a junction, f.e.t. including the rise of voltage outside the channel, is proposed. This study is based on an approximate solution of the bidimensional Poisson equation with appropriate boundary conditions. Experimental evidence is also presented.
  • Keywords
    field effect transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19690317
  • Filename
    4210537