DocumentCode :
881250
Title :
Characteristics of SEU Current Transients and Collected Charge in GaAs and Si Devices
Author :
Shanfield, Z. ; Moriwaki, M.M. ; Digby, W.M. ; Srour, J.R. ; Campbell, D.E.
Author_Institution :
Northrop Research and Technology Center One Research Park Palos Verdes Peninsula, CA 90274
Volume :
32
Issue :
6
fYear :
1985
Firstpage :
4104
Lastpage :
4109
Abstract :
Results of transient current and charge collection measurements on GaAs and Si devices bombarded with 5-MeV alpha particles are presented. Upper bounds for risetime and charge collection time of ~120 psec and ~300 psec, respectively, were determined for the GaAs devices studied. The observed lack of funneling for lightly doped Si devices is consistent with the long dielectric relaxation time in the substrate material. Slow charge collection in lightly doped Si diodes is interpreted as arising from drift in low electric fields. Measurements of the bias and doping dependence of charge collection by funneling are in good agreement with the predictions of the McLean-Oldham model.
Keywords :
Alpha particles; Charge measurement; Current measurement; Dielectric devices; Dielectric materials; Dielectric measurements; Dielectric substrates; Gallium arsenide; Particle measurements; Upper bound;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1985.4334076
Filename :
4334076
Link To Document :
بازگشت