• DocumentCode
    881279
  • Title

    AlGaInP/GaInAs strained quantum well lasers

  • Author

    Yoshida, Isao ; Katsuyama, Tomokazu ; Hashimoto, Jun ; Hayashi, H.

  • Author_Institution
    Sumitoma Electric Industries Ltd., Yokohama, Japan
  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    4/15/1993 12:00:00 AM
  • Firstpage
    654
  • Lastpage
    655
  • Abstract
    AlGaInP cladding layers have been applied for the first time to GaInAs strained quantum well lasers oscillating around 0.98 mu m. The device has lower threshold current and larger T0 than a device with GaInP cladding layers. This was expected from a larger bandgap difference between active and cladding layers.
  • Keywords
    III-V semiconductors; aluminium compounds; claddings; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 0.98 micron; 3 to 40 mA; AlGaInP-GaInAs; active layers; bandgap difference; cladding layers; optical output characteristics; strained quantum well lasers; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930438
  • Filename
    209930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881279