Title :
AlGaInP/GaInAs strained quantum well lasers
Author :
Yoshida, Isao ; Katsuyama, Tomokazu ; Hashimoto, Jun ; Hayashi, H.
Author_Institution :
Sumitoma Electric Industries Ltd., Yokohama, Japan
fDate :
4/15/1993 12:00:00 AM
Abstract :
AlGaInP cladding layers have been applied for the first time to GaInAs strained quantum well lasers oscillating around 0.98 mu m. The device has lower threshold current and larger T0 than a device with GaInP cladding layers. This was expected from a larger bandgap difference between active and cladding layers.
Keywords :
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 0.98 micron; 3 to 40 mA; AlGaInP-GaInAs; active layers; bandgap difference; cladding layers; optical output characteristics; strained quantum well lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930438
