DocumentCode :
881295
Title :
The charge-coupled RAM cell concept
Author :
Tasch, A.F. ; Frye, R.C.
Volume :
11
Issue :
1
fYear :
1976
fDate :
2/1/1976 12:00:00 AM
Firstpage :
58
Lastpage :
63
Abstract :
A new concept in MOS dynamic RAM cells is described and demonstrated. The charge-coupled RAM (CC RAM) cell combines the storage capacity and transfer gate of the one-transistor cell into a single gate. The resulting cell is simpler than the conventional one-transistor cell and possesses significant advantages in packing density and potentially higher yield. One of the variations of the CC RAM cell concept results in a cell whose operation is identical (voltage and timing) to that of the present one-transistor cell. In addition, the CC RAM cell fabrication is essentially the same as the present one-transistor cell process. The CC RAM is an attractive candidate for the next generation RAM´s.
Keywords :
Charge-coupled devices; Digital integrated circuits; Monolithic integrated circuits; Random-access storage; Semiconductor storage devices; charge-coupled devices; digital integrated circuits; monolithic integrated circuits; random-access storage; semiconductor storage devices; Aircraft; Charge coupled devices; DRAM chips; Fabrication; Ion beams; Microwave devices; Physics; Production; Random access memory; Read-write memory;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1976.1050675
Filename :
1050675
Link To Document :
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