The charge-coupled RAM cell concept

Author

Tasch, A.F. ; Frye, R.C.

Volume

11

Issue

1

fYear

1976

fDate

2/1/1976 12:00:00 AM

Firstpage

58

Lastpage

63

Abstract

A new concept in MOS dynamic RAM cells is described and demonstrated. The charge-coupled RAM (CC RAM) cell combines the storage capacity and transfer gate of the one-transistor cell into a single gate. The resulting cell is simpler than the conventional one-transistor cell and possesses significant advantages in packing density and potentially higher yield. One of the variations of the CC RAM cell concept results in a cell whose operation is identical (voltage and timing) to that of the present one-transistor cell. In addition, the CC RAM cell fabrication is essentially the same as the present one-transistor cell process. The CC RAM is an attractive candidate for the next generation RAM´s.

Keywords

Charge-coupled devices; Digital integrated circuits; Monolithic integrated circuits; Random-access storage; Semiconductor storage devices; charge-coupled devices; digital integrated circuits; monolithic integrated circuits; random-access storage; semiconductor storage devices; Aircraft; Charge coupled devices; DRAM chips; Fabrication; Ion beams; Microwave devices; Physics; Production; Random access memory; Read-write memory;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1976.1050675

Filename

1050675