Title :
Simulation of Charge Collection in a Multilayer Device
Author :
Kreskovsky, J.P. ; Grubin, H.L.
Author_Institution :
Scientific Research Associates, Inc. Glastonbury, CT 06033
Abstract :
Charge collection transients following a strike by an ionizing particle are computed for a multilayer N+PNN+ device at two different bias points. The results are consistent with experimental observations. Details of the current paths within the device are also shown and indicate that field funneling concepts do not directly apply to this structure.
Keywords :
Analytical models; Computational modeling; Distributed computing; Doping; Gallium arsenide; Ionization; Nonhomogeneous media; Particle tracking; Semiconductor devices; Semiconductor diodes;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4334082
