DocumentCode
881318
Title
Simulation of Charge Collection in a Multilayer Device
Author
Kreskovsky, J.P. ; Grubin, H.L.
Author_Institution
Scientific Research Associates, Inc. Glastonbury, CT 06033
Volume
32
Issue
6
fYear
1985
Firstpage
4140
Lastpage
4144
Abstract
Charge collection transients following a strike by an ionizing particle are computed for a multilayer N+PNN+ device at two different bias points. The results are consistent with experimental observations. Details of the current paths within the device are also shown and indicate that field funneling concepts do not directly apply to this structure.
Keywords
Analytical models; Computational modeling; Distributed computing; Doping; Gallium arsenide; Ionization; Nonhomogeneous media; Particle tracking; Semiconductor devices; Semiconductor diodes;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1985.4334082
Filename
4334082
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