DocumentCode :
881344
Title :
Correlated Proton and Heavy Ion Upset Measurements on IDT Static RAMs
Author :
Campbell, A.B. ; Stapor, W.J. ; Koga, R. ; Kolasinski, W.A.
Author_Institution :
Naval Research Laboratory Washington, D.C. 20375
Volume :
32
Issue :
6
fYear :
1985
Firstpage :
4150
Lastpage :
4154
Abstract :
Upset measurements on four types of CMOS/NMOS RAMs by IDT have been performed using both protons and heavy ions.
Keywords :
CMOS process; Cyclotrons; Energy measurement; Laboratories; MOS devices; Molecular beam epitaxial growth; Particle beams; Performance evaluation; Protons; Testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1985.4334084
Filename :
4334084
Link To Document :
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