• DocumentCode
    881407
  • Title

    Fabrication and performances of delta-doped Si n-MESFET grown by MBE

  • Author

    Chen, Qian ; Willander, Magnus ; Carter, Jenny ; Thaki, C.H. ; Evans, E.R.A.

  • Author_Institution
    Linkoping Univ., Sweden
  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    4/15/1993 12:00:00 AM
  • Firstpage
    671
  • Lastpage
    673
  • Abstract
    The fabrication of an Sb delta-doped Si n-MESFET grown by molecular-beam epitaxy (MBE) and a low-energy Sb ion source is reported. The FETs have gate lengths of 2 mu m and showed a transconductance as high as 28 mS/mm and a gate breakdown voltage of 3.7-4.8 V.
  • Keywords
    Schottky gate field effect transistors; antimony; elemental semiconductors; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; 2 micron; 28 mS/mm; 3.7 to 4.8 V; MBE; Si:Sb; delta doped nMESFET; gate breakdown voltage; gate lengths; low-energy Sb ion source; molecular-beam epitaxy; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930450
  • Filename
    209942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881407