Title :
Fabrication and performances of delta-doped Si n-MESFET grown by MBE
Author :
Chen, Qian ; Willander, Magnus ; Carter, Jenny ; Thaki, C.H. ; Evans, E.R.A.
Author_Institution :
Linkoping Univ., Sweden
fDate :
4/15/1993 12:00:00 AM
Abstract :
The fabrication of an Sb delta-doped Si n-MESFET grown by molecular-beam epitaxy (MBE) and a low-energy Sb ion source is reported. The FETs have gate lengths of 2 mu m and showed a transconductance as high as 28 mS/mm and a gate breakdown voltage of 3.7-4.8 V.
Keywords :
Schottky gate field effect transistors; antimony; elemental semiconductors; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; 2 micron; 28 mS/mm; 3.7 to 4.8 V; MBE; Si:Sb; delta doped nMESFET; gate breakdown voltage; gate lengths; low-energy Sb ion source; molecular-beam epitaxy; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930450
