Title :
Trends in Parts Susceptibility to Single Event Upset from Heavy Ions
Author :
Nichols, Donald K. ; Price, William E. ; Kolasinski, W.A. ; Koga, R. ; Pickel, James C. ; Blandford, James T., Jr. ; Waskiewicz, A.E.
Author_Institution :
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA
Abstract :
New test data from the Jet Propulsion Laboratory (JPL), The Aerospace Corporation, Rockwell International (Anaheim) and IRT have been combined with published data of JPL [1,2] and Aerospace [3] to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. This data has been arranged to exhibit the SEU susceptibility of devices by function, technology and manufacturer. Clear trends emerge which should be useful in predicting future device performance.
Keywords :
Aerospace testing; CMOS technology; Circuit simulation; Computational modeling; Computer simulation; Manufacturing; Propulsion; Semiconductor device modeling; Single event upset; System testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4334092