• DocumentCode
    881436
  • Title

    Microwave noise characterisation of poly-emitter bipolar junction transistors

  • Author

    Deen, M.J. ; Ilowski, J.J.

  • Author_Institution
    Northern Telecom Ltd., Nepean, Ont., Canada
  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    4/15/1993 12:00:00 AM
  • Firstpage
    676
  • Lastpage
    677
  • Abstract
    The microwave noise characteristics of poly-emitter bipolar junction transistors have been evaluated in a 0.8 mu m silicon BiCMOS process, at frequencies between 1 and 5.6 GHz and for collector currents between 0.5 and 15 mA. Using a small-signal model for the poly-emitter bipolar junction transistors, very good agreement has been obtained between measurements and calculations of both noise figure (FMIN) against frequency, and FMIN against collector current. It is found that FMIN was 2.3 dB at 1 GHz and 8.3 dB at 5.6 GHz for a collector current of 5 mA.
  • Keywords
    BiCMOS integrated circuits; bipolar transistors; digital integrated circuits; equivalent circuits; semiconductor device models; semiconductor device noise; solid-state microwave devices; 0.5 to 15 mA; 0.8 micron; 1 to 5.6 GHz; BiCMOS process; bipolar junction transistors; collector current; high speed circuits; microwave noise characteristics; noise figure; poly-emitter; small-signal model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930453
  • Filename
    209945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881436