Title :
Series resistance of silicided ohmic contacts for nanoelectronics
Author :
Chieh, Yuen-Shung ; Perera, Asanga H. ; Krusius, Peter J.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
8/1/1992 12:00:00 AM
Abstract :
The electrical behavior of shallow silicide-to-silicon ohmic contacts has been evaluated for lateral dimensions to 50 nm. Trench-isolated series resistance test structures were fabricated using TiSi2 self-aligned contact technology. Resistance measurements have been performed as a function of contact size in the temperature range from 100 to 300 K and analyzed using multidimensional resistor ladder network models. Well-behaved small-volume ohmic contacts have been achieved. Large-area contact characteristics can be maintained to the smallest sizes. Multidimensional current flow has little effect on the measured resistances. Small lateral dimensional variations are responsible for the higher than predicted series resistance for the smallest sizes. The implications on nanoelectronic devices and circuits are quantified
Keywords :
contact resistance; elemental semiconductors; ohmic contacts; semiconductor-metal boundaries; silicon; titanium compounds; 100 K to 300 K; Si-TiSi2 contacts; contact size; multidimensional current flow; multidimensional resistor ladder network models; nanoelectronic circuits; nanoelectronic devices; resistance measurement; self-aligned contact technology; semiconductor; silicided ohmic contacts; trench isolated series resistance test structures; Automatic testing; Contact resistance; Electric resistance; Electrical resistance measurement; Multidimensional systems; Nanoelectronics; Ohmic contacts; Performance analysis; Performance evaluation; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
