• DocumentCode
    881569
  • Title

    The validity of the depletion approximation applied to a bulk channel charge-coupled device

  • Author

    Dale, Brian

  • Volume
    11
  • Issue
    1
  • fYear
    1976
  • fDate
    2/1/1976 12:00:00 AM
  • Firstpage
    207
  • Lastpage
    214
  • Abstract
    The solution of the equations which determine the potential profile in bulk channel charge-coupled devices (BCCD´s) in the presence of a nonuniform fixed impurity concentration and mobile charge in the channel is quite complex. A major simplification results from the assumption that the mobile charge completely neutralizes the fixed impurity charge over a region of space surrounding the potential minimum. It is shown in this paper that, based upon physical arguments, this assumption must give results accurate to within 0.1 V for the value of the potential minimum. Further, it is possible to accurately predict the region in the channel within which virtually all of the free charge must reside. Thus these two important design parameters can be deduced from the simple depletion approximation with an accuracy good enough for most practical applications.
  • Keywords
    Charge-coupled devices; charge-coupled devices; Dielectric constant; Electrodes; Electrons; Gettering; Gold; Impurities; Integrated circuit technology; Physics; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1976.1050699
  • Filename
    1050699