DocumentCode :
881569
Title :
The validity of the depletion approximation applied to a bulk channel charge-coupled device
Author :
Dale, Brian
Volume :
11
Issue :
1
fYear :
1976
fDate :
2/1/1976 12:00:00 AM
Firstpage :
207
Lastpage :
214
Abstract :
The solution of the equations which determine the potential profile in bulk channel charge-coupled devices (BCCD´s) in the presence of a nonuniform fixed impurity concentration and mobile charge in the channel is quite complex. A major simplification results from the assumption that the mobile charge completely neutralizes the fixed impurity charge over a region of space surrounding the potential minimum. It is shown in this paper that, based upon physical arguments, this assumption must give results accurate to within 0.1 V for the value of the potential minimum. Further, it is possible to accurately predict the region in the channel within which virtually all of the free charge must reside. Thus these two important design parameters can be deduced from the simple depletion approximation with an accuracy good enough for most practical applications.
Keywords :
Charge-coupled devices; charge-coupled devices; Dielectric constant; Electrodes; Electrons; Gettering; Gold; Impurities; Integrated circuit technology; Physics; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1976.1050699
Filename :
1050699
Link To Document :
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