Title :
1/f noise and interface trap density in high field stressed pMOS transistors
Author :
Augier, P. ; Schrimpf, R.D. ; Galloway, Kenneth F.
fDate :
4/15/1993 12:00:00 AM
Abstract :
Experimental results for pMOS transistors subjected to high field stressing are reported. 1/f noise and interface trap density increase with stress time. A direct relationship between the increase in 1/f noise and interface trap density during the high field stressing is observed.
Keywords :
electron traps; high field effects; hole traps; insulated gate field effect transistors; interface electron states; random noise; semiconductor device noise; semiconductor device testing; 1/f noise; MOSFET; high field stressed; high field stressing; interface trap density; pMOS transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930466
