• DocumentCode
    881611
  • Title

    Low threshold-current, wide tuning-range, butt-joint DBB laser grown with four MOVPE steps

  • Author

    Stoltz, B. ; Sahlen, O.

  • Author_Institution
    Ericsson Components AB, Stockholm, Sweden
  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    4/15/1993 12:00:00 AM
  • Firstpage
    700
  • Lastpage
    702
  • Abstract
    InGaAsP-InP butt-joint, buried-heterostructure DBR lasers, with 8 mA threshold current at T=293 K have been developed, using electron-beam lithography and a four-step MOVPE process with a semi-insulating Fe:InP current-blocking structure. Packaged devices give 5 mW fibre-coupled power. The maximum tuning range is 9.1 nm. The 3 dB modulation bandwidth is 9 GHz.
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 5 mW; 8 mA; 9 GHz; BH type; InGaAsP-InP; InP:Fe current blocking structure; MOVPE; buried-heterostructure; butt-joint DBB laser; electron-beam lithography; low threshold current; wide tuning-range;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930469
  • Filename
    209962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881611