Title :
Low threshold-current, wide tuning-range, butt-joint DBB laser grown with four MOVPE steps
Author :
Stoltz, B. ; Sahlen, O.
Author_Institution :
Ericsson Components AB, Stockholm, Sweden
fDate :
4/15/1993 12:00:00 AM
Abstract :
InGaAsP-InP butt-joint, buried-heterostructure DBR lasers, with 8 mA threshold current at T=293 K have been developed, using electron-beam lithography and a four-step MOVPE process with a semi-insulating Fe:InP current-blocking structure. Packaged devices give 5 mW fibre-coupled power. The maximum tuning range is 9.1 nm. The 3 dB modulation bandwidth is 9 GHz.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 5 mW; 8 mA; 9 GHz; BH type; InGaAsP-InP; InP:Fe current blocking structure; MOVPE; buried-heterostructure; butt-joint DBB laser; electron-beam lithography; low threshold current; wide tuning-range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930469
