DocumentCode
881643
Title
Direct comparison of InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulators
Author
Hawdon, B.J. ; Tutken, T. ; Hangleiter, A. ; Glew, R.W. ; Whiteaway, J.E.A.
Author_Institution
Stuttgart Univ., Germany
Volume
29
Issue
8
fYear
1993
fDate
4/15/1993 12:00:00 AM
Firstpage
705
Lastpage
707
Abstract
Using picosecond pump-probe measurements, InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulator structures are compared directly. It is found that the short-pulse exciton saturation intensity for the Al-based structure is at least 10 times that for the P-based system. The more efficient carrier sweep-out observed in the Al-based modulator is due to the lower valence-band discontinuity, making it by far the more attractive structure for high-power applications.
Keywords
III-V semiconductors; aluminium compounds; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor quantum wells; valence bands; InGaAs-InGaAlAs; InGaAs-InGaAsP; carrier sweep-out; picosecond pump-probe measurements; quantum well modulators; short-pulse exciton saturation intensity; valence-band discontinuity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930472
Filename
209965
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