Hydrogenated amorphous silicon-carbide thin-film light-emitting diode with quantum-well-injection structure

To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) PIN thin-film light-emitting diode (TFLED), a quantum-well-injection (QWI) structure has been incorporated into the i-layer of an a-SiC:H PIN TFLED at the p-i interface. The obtained brightness of this QWI TFLED is 256 cd/m² at an injection current density of 800 mA/cm², which is about three orders of magnitude higher than the brightness of an a-SiC:H PIN TFLED. Also, a comparatively lower EL threshold voltage of 6V was observed for this a-SiC:H QWI TFLED.