DocumentCode
881681
Title
Experimental determination of the ratio of injected hole current and total current in silicon nitride
Author
Quast, W.
Volume
5
Issue
20
fYear
1969
Firstpage
485
Lastpage
487
Abstract
In a metal-Si3N4-nSi structure, the net minority-carrier generation rate is equal to the hole injection rate into the insulator under balanced conditions. The generation rate has been determined experimentally, giving the ratio of the injected hole current and the total current in the Si3N4 film.
Keywords
metal-insulator-semiconductor structures; silicon compounds; thin films;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690369
Filename
4210587
Link To Document