Physical characterization of hot-electron-induced MOSFET degradation through an improved approach to the charge-pumping technique

Author

Bergonzoni, Carlo ; Libera, Giovanna Dalla

Author_Institution

SGS-Thomson Microelectronics, Agrate Brianza, Italy

Volume

39

Issue

8

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

1895

Lastpage

1901

Abstract

The physical mechanisms which are involved in the hot-carrier-induced degradation of CMOS transistor are analyzed by means of an improved approach to the charge-pumping measurement technique. The proposed experimental procedure allows the simultaneous characterization of both interface-states generation and carrier trapping in the gate insulator. The analysis is extended to both static and dynamic degradation processes, whose differences and similarities are discussed

Keywords

electron traps; hole traps; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device testing; CMOS transistor; Si-SiO₂; carrier trapping; charge-pumping technique; dynamic degradation processes; gate insulator; hot-electron-induced MOSFET degradation; interface-states generation; physical mechanisms; semiconductor; static degradation process; Character generation; Charge pumps; Degradation; Hot carriers; Insulation; Interface states; MOSFET circuits; Measurement techniques; Silicon compounds; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.144681

Filename

144681