• DocumentCode
    881806
  • Title

    Accounting for Dose-Enhancement Effects with CMOS Transistors

  • Author

    Fleetwood, D.M. ; Winokur, P.S. ; Beegle, R.W. ; Dressendorfer, P.V. ; Draper, B.L.

  • Author_Institution
    Sandia National Laboratories P. O. Box 5800 Albuquerque, NM 87185
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    4369
  • Lastpage
    4375
  • Abstract
    Dose-enhancement effects are monitored with standard CMOS transistors by measuring thresholdvoltage shifts due to oxide-trapped charge and interface states. These results, in conjunction with studies of the effects of trapped-hole annealing and electron-hole recombination, are used to correlate the responses of transistors irradiated with Co-60 gamma rays or 10 keV X rays.
  • Keywords
    Annealing; Current measurement; Electron traps; Laboratories; Measurement standards; Monitoring; Packaging; Spontaneous emission; Testing; Wafer scale integration;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334126
  • Filename
    4334126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881806