• DocumentCode
    881836
  • Title

    Radiation Damage Effects of Electrons and H, He, O, Cl and Cu Ions on GaAs JFETs

  • Author

    Knudson, A.R. ; Campbell, A.B. ; Stapor, W.J. ; Shapiro, P. ; Mueller, G.P. ; Zuleeg, R.

  • Author_Institution
    Naval Research Laboratory Washington, D. C. 20375-5000
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    4388
  • Lastpage
    4392
  • Abstract
    Radiation damage effects have been studied in GaAs EJFETs for a variety of different energetic particles. Differences in damage rates are consistent with simple displacement damage and carrier removal.
  • Keywords
    Apertures; Detectors; Electrons; Gallium arsenide; Helium; Ionization; JFETs; Neutrons; Particle scattering; Semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334129
  • Filename
    4334129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881836