• DocumentCode
    881935
  • Title

    Transverse electric fields in n-GaAs

  • Author

    Aubrey, J.E. ; Yick, G.P. ; Westwood, D.I.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Wales Coll. of Cardiff, UK
  • Volume
    28
  • Issue
    4
  • fYear
    1992
  • Firstpage
    432
  • Lastpage
    433
  • Abstract
    Longitudinal electric fields >or=0.5 kV/cm applied to a thin off-axis n-GaAs sample give rise to transverse electric fields across the thin sample dimension. This arises from the anisotropic transport properties of L point electrons, and may provide a means of determining intervalley scattering times and other transport related parameters for GaAs.
  • Keywords
    III-V semiconductors; electric fields; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; high field effects; many-valley semiconductors; GaAs; L point electrons; anisotropic transport properties; applied longitudinal fields; intervalley scattering times; n-type semiconductor; offaxis sample; transverse electric fields;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920271
  • Filename
    126409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881935