Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology

Author

Chen, K.N. ; Fan, A. ; Tan, C.S. ; Reif, R.

Author_Institution

Microsystems Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA

Volume

25

Issue

1

fYear

2004

Firstpage

10

Lastpage

12

Abstract

A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10^-8 Ω-cm² are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.

Keywords

contact resistance; copper; integrated circuit interconnections; integrated circuit modelling; 3-dimensional integration technology; anneal time; bonded copper interconnects; bonding interfaces; bonding-based misalignment; contact resistance measurement; contact resistances; measurement errors; test structure; Annealing; Contact resistance; Copper; Electrical resistance measurement; Fabrication; Integrated circuit interconnections; Kelvin; Measurement errors; Testing; Wafer bonding;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.821591

Filename

1264098