High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

Author

Kuo, Po-Yi ; Chao, Tien-Sheng ; Wang, Ren-Jie ; Lei, Tan-Fu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

27

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

258

Lastpage

261

Abstract

In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger field-effect mobility compared with conventional TFTs. The FSA-TFTs exhibit small S/D and gate parasitic resistance and effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FSA-TFTs are suitable for high-performance driving TFTs with good output characteristics and large breakdown voltage.

Keywords

carrier mobility; elemental semiconductors; field effect transistors; nickel; semiconductor device reliability; silicon; thin film transistors; 40 nm; Ni; Si; breakdown voltage; floating-body effect; gate parasitic resistance; gate polycrystalline silicon; parasitic bipolar junction transistor; self-aligned silicided source-drain; thin-film transistors; Active matrix liquid crystal displays; Breakdown voltage; Chaos; Crystallization; MOSFETs; Semiconductor thin films; Silicon; Thin film circuits; Thin film transistors; Threshold voltage; Floating-body effect; fully salicided; parasitic bipolar junction transistor; polycrystalline silicon thin-film transistors (poly-Si TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.870417

Filename

1610779