Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC

Author

Tu, Chun-Hao ; Chang, Ting-Chang ; Liu, Po-Tsun ; Yang, Che-Yu ; Liu, Hsin-Chou ; Chen, Wei-Ren ; Wu, Yung-Chun ; Chang, Chun-Yen

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

27

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

262

Lastpage

264

Abstract

The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.

Keywords

crystallisation; elemental semiconductors; excimer lasers; fluorine; ion implantation; laser beam annealing; semiconductor device reliability; semiconductor doping; silicon; thin film transistors; F; Si; electrical characteristics; electrical reliability; excimer laser annealing; excimer laser crystallization; fluorine-ion-implantion; gate oxide layers; poly-Si layers; polycrystalline silicon thin-film transistors; trap state density; Crystallization; Displays; Electric variables; Hydrogen; Ion implantation; Manufacturing; Passivation; Silicon; Thin film transistors; Threshold voltage; Fluorine ion implantation; polycrystalline silicon thin-film transistors (poly-Si TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.870420

Filename

1610780