• DocumentCode
    882079
  • Title

    1510 mS/mm 0.1 μm gate length pseudomorphic HEMTs with intrinsic current gain cutoff frequency of 220 GHz

  • Author

    Diette, F. ; Langrez, D. ; Codron, J.L. ; Delos, E. ; Theron, D. ; Salmer, G.

  • Author_Institution
    Inst. d´´Electron. et de Microelectron. du Nord, Lille I Univ., Villeneuve d´´Ascq, France
  • Volume
    32
  • Issue
    9
  • fYear
    1996
  • fDate
    4/25/1996 12:00:00 AM
  • Firstpage
    848
  • Lastpage
    850
  • Abstract
    The state of the art for a planar doped pseudomorphic Al0.2 Ga0.8As/In0.2Ga0.8As HEMT with a gate length of 0.1 μm is presented. The devices exhibit an extrinsic and intrinsic transconductance of 1070 and 1510 mS/mm. Respectively, a maximum current density of 550 mA/mm and a peak current gain cutoff frequency of 220 GHz. These results are the highest ever reported for HEMTs fabricated on GaAs substrates
  • Keywords
    III-V semiconductors; gallium arsenide; high electron mobility transistors; millimetre wave field effect transistors; 0.1 mum; 220 GHz; Al0.2Ga0.8As-In0.2Ga0.8 As; Al0.2Ga0.8As/In0.2Ga0.8 As HEMT; GaAs; GaAs substrates; extrinsic and intrinsic transconductance; intrinsic current gain cutoff frequency; intrinsic transconductance; maximum current density; peak current gain cutoff frequency; planar doped pseudomorphic HEMT;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960516
  • Filename
    492961
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=882079