Title :
1510 mS/mm 0.1 μm gate length pseudomorphic HEMTs with intrinsic current gain cutoff frequency of 220 GHz
Author :
Diette, F. ; Langrez, D. ; Codron, J.L. ; Delos, E. ; Theron, D. ; Salmer, G.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Lille I Univ., Villeneuve d´´Ascq, France
fDate :
4/25/1996 12:00:00 AM
Abstract :
The state of the art for a planar doped pseudomorphic Al0.2 Ga0.8As/In0.2Ga0.8As HEMT with a gate length of 0.1 μm is presented. The devices exhibit an extrinsic and intrinsic transconductance of 1070 and 1510 mS/mm. Respectively, a maximum current density of 550 mA/mm and a peak current gain cutoff frequency of 220 GHz. These results are the highest ever reported for HEMTs fabricated on GaAs substrates
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; millimetre wave field effect transistors; 0.1 mum; 220 GHz; Al0.2Ga0.8As-In0.2Ga0.8 As; Al0.2Ga0.8As/In0.2Ga0.8 As HEMT; GaAs; GaAs substrates; extrinsic and intrinsic transconductance; intrinsic current gain cutoff frequency; intrinsic transconductance; maximum current density; peak current gain cutoff frequency; planar doped pseudomorphic HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960516
