Title :
Band-to-band tunneling in vertically scaled SiGe:C HBTs
Author :
Lagarde, D. ; Chevalier, P. ; Schwartzmann, T. ; Chantre, A.
Author_Institution :
STMicroelectron., Crolles, France
fDate :
4/1/2006 12:00:00 AM
Abstract :
A nonideal base current component with negative differential resistance is observed at low injection on Gummel characteristics of high-speed SiGe:C bipolar transistors. The temperature dependence of this effect and the influence of emitter-base engineering on its magnitude are described. The results point to band-to-band tunneling in the emitter-base junction as the physical origin of this phenomenon.
Keywords :
Ge-Si alloys; carbon; heterojunction bipolar transistors; high-speed techniques; negative resistance; semiconductor junctions; semiconductor materials; tunnelling; Gummel characteristics; SiGe-C; band-to-band tunneling; emitter-base junction; heterojunction bipolar transistor; high-speed bipolar transistors; negative differential resistance; temperature dependence; Automotive engineering; Bipolar transistors; CMOS technology; Current density; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave technology; Silicon germanium; Temperature dependence; Tunneling; Heterojunction bipolar transistor (HBT); SiGe; negative differential resistance; tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.871853
