DocumentCode
882120
Title
A model for charge transport in surface channel devices
Author
Scott, D.B. ; Chamberlain, S.G.
Volume
11
Issue
3
fYear
1976
fDate
6/1/1976 12:00:00 AM
Firstpage
422
Lastpage
424
Abstract
A distributed capacitor model is proposed to simulate charge transport in surface inversion layers. Theoretical results of this model agreed well with experimental results obtained on the input section of a charge-coupled device (CCD).
Keywords
Charge-coupled devices; Semiconductor device models; charge-coupled devices; semiconductor device models; Capacitance; Capacitors; Charge coupled devices; Circuits; Equations; Microscopy; Potential well; Resistors; TV; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1976.1050750
Filename
1050750
Link To Document