A comprehensive modeling of dynamic negative-bias temperature instability in PMOS body-tied FinFETs

Author

Lee, Hyunjin ; Lee, Choong-Ho ; Park, Donggun ; Choi, Yang-Kyu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

27

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

281

Lastpage

283

Abstract

This paper presents a novel approach to estimate the rising and falling behavior of Nth-order ON-state current by dynamic negative-bias temperature instability (DNBTI), with a comparison between experimental data and a modified DNBTI model in PMOS body-tied FinFETs for the first time. The modified model was proposed to predict not only Nth-order DNBTI behavior but also temperature and stress bias effects. The fin-width dependence was analyzed, and different trends between silicon-on-insulator and body-tied FinFETs were explained with the extracted DNBTI model parameters: stress time, oxide-field strength, and temperature. The proposed model closely matched the measured static lifetime.

Keywords

MOSFET; semiconductor device models; semiconductor device reliability; silicon-on-insulator; stress effects; thermal stability; PMOS body-tied FinFET device; dynamic negative-bias temperature instability; fin-width dependence; silicon-on-insulator; stress bias effects; temperature effects; Bonding; Charge carrier processes; Degradation; FinFETs; Niobium compounds; Silicon on insulator technology; Stress; Substrates; Temperature; Titanium compounds; Body tied; FinFET; double gate; dynamic negative-bias temperature instability (DNBTI); floating-body; reliability; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.870864

Filename

1610786