DocumentCode :
882147
Title :
High-frequency response in carbon nanotube field-effect transistors
Author :
Frank, David J. ; Appenzeller, Joerg
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
25
Issue :
1
fYear :
2004
Firstpage :
34
Lastpage :
36
Abstract :
We report electrical measurements of the radio frequency response of carbon nanotube field-effect transistors (CNFETs). The very low current drive of CNFETs makes conventional high-frequency measurements difficult. To overcome this problem, we have used a novel approach to easily measure the response up to 250 MHz in nonoptimized experimental conditions. We observe a clear response of our CNFETs with no deterioration in signal up to at least 250 MHz, which is the limit for our present configuration.
Keywords :
carbon nanotubes; insulated gate field effect transistors; nanotechnology; 250 MHz; C; carbon nanotube; electrical measurements; field-effect transistors; high-frequency measurements; high-frequency response; radio frequency response; signal deterioration; very low current drive; CNTFETs; Carbon nanotubes; Current measurement; Dielectric substrates; Electric variables measurement; FETs; Frequency measurement; Frequency response; Radio frequency; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2003.821589
Filename :
1264106
Link To Document :
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