• DocumentCode
    882167
  • Title

    Gettering of impurities from gallium arsenide

  • Author

    Dastidar, P.R.

  • Volume
    5
  • Issue
    22
  • fYear
    1969
  • Firstpage
    553
  • Lastpage
    554
  • Abstract
    Impurities have been gettered from gallium arsenide using a glass surface layer. Mobility has been found to increase by a factor of two to three. Injection-laser threshold current density at 77K reduced from 750Acm¿2 to 425Acm¿2.
  • Keywords
    semiconductor defects; semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19690416
  • Filename
    4210636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=882167