Title :
High-voltage SOS/MOS devices and circuit elements: Design, fabrication, and performance
Author :
Ronen, Ram S. ; Splinter, Michael R. ; Tremain, Robert E., Jr.
fDate :
8/1/1976 12:00:00 AM
Abstract :
High-voltage metal-oxide-semiconductor (HVMOS) transistors fabricated with low-voltage MOS circuits on the same silicon-on-sapphire (SOS) chip are critical for EAROM´s and plasma display applications. An examination of the voltage limitations in conventional MOS is described. Several approaches to fabricating HVMOS transistors are analyzed, including the MOS tetrode, the extended drain MOST, and the double diffused MOST. Results of parameter tests on these devices are given and characteristics of HVMOS circuit elements discussed.
Keywords :
Field effect transistors; Integrated circuit production; Monolithic integrated circuits; Semiconductor device manufacture; field effect transistors; integrated circuit production; monolithic integrated circuits; semiconductor device manufacture; Breakdown voltage; Circuit testing; Degradation; FETs; Fabrication; Large scale integration; MOS devices; MOSFET circuits; Plasma displays; Read-write memory;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1976.1050756
