DocumentCode
882178
Title
High-voltage SOS/MOS devices and circuit elements: Design, fabrication, and performance
Author
Ronen, Ram S. ; Splinter, Michael R. ; Tremain, Robert E., Jr.
Volume
11
Issue
4
fYear
1976
fDate
8/1/1976 12:00:00 AM
Firstpage
431
Lastpage
442
Abstract
High-voltage metal-oxide-semiconductor (HVMOS) transistors fabricated with low-voltage MOS circuits on the same silicon-on-sapphire (SOS) chip are critical for EAROM´s and plasma display applications. An examination of the voltage limitations in conventional MOS is described. Several approaches to fabricating HVMOS transistors are analyzed, including the MOS tetrode, the extended drain MOST, and the double diffused MOST. Results of parameter tests on these devices are given and characteristics of HVMOS circuit elements discussed.
Keywords
Field effect transistors; Integrated circuit production; Monolithic integrated circuits; Semiconductor device manufacture; field effect transistors; integrated circuit production; monolithic integrated circuits; semiconductor device manufacture; Breakdown voltage; Circuit testing; Degradation; FETs; Fabrication; Large scale integration; MOS devices; MOSFET circuits; Plasma displays; Read-write memory;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1976.1050756
Filename
1050756
Link To Document