Title :
A Si bipolar 1.4-GHz time space switch LSI for B-ISDN
Author :
Matsuda, Osamu ; Hayano, Shin-Ichiro ; Takeuchi, Takao ; Kitahata, Hideki ; Takemura, Hisashi ; Tashiro, Tsutomu
Author_Institution :
NEC Corp., Kanagawa, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
A 155-MB/s 32×32 Si bipolar switch LSI designed for wide application in the broadband ISDN was implemented. The operating speed is 1.4 GHz using an A-BSA Si bipolar process. Its throughput is 5.0 Gb/s by handling four 1.4-GHz interfaces, each of which supports an eight-channel multiplexed data stream. To realize a highly integrated high-speed bipolar LSI, power consumption and chip area should be reduced. Two technologies were developed for the LSI: (1) an active pull-down circuit with an embedded bias circuit in each gate, and (2) a modified standard cell with overlapped cell-channel structure. Using these technologies, total power consumption and chip area were reduced to 60% and 70%, respectively, of what is expected when conventional emitter-coupled logic (ECL) technologies and standard cell structures are used. The LSI evaluation results show that the developed LSI has sufficient performance to realize a large-scale B-ISDN switching system
Keywords :
B-ISDN; bipolar integrated circuits; digital communication systems; digital integrated circuits; electronic switching systems; elemental semiconductors; large scale integration; semiconductor switches; silicon; switching circuits; 1.4 GHz; 155 Mbit/s; 5 Gbit/s; A-BSA Si bipolar process; B-ISDN; Si; active pull-down circuit; bipolar switch; broadband ISDN; chip area; eight-channel multiplexed data stream; embedded bias circuit; overlapped cell-channel structure; power consumption; time space switch LSI; B-ISDN; Energy consumption; Integrated circuit technology; Large scale integration; Large-scale systems; Logic; Standards development; Switches; Switching systems; Throughput;
Journal_Title :
Solid-State Circuits, IEEE Journal of
