Design and performance of an InGaAs-InP single-photon avalanche diode detector

Author

Pellegrini, Sara ; Warburton, Ryan E. ; Tan, Lionel J J ; Ng, Jo Shien ; Krysa, Andrey B. ; Groom, Kristian ; David, John P R ; Cova, Sergio ; Robertson, Michael J. ; Buller, Gerald S.

Author_Institution

Sch. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh, UK

Volume

42

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

397

Lastpage

403

Abstract

This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; jitter; optical design techniques; optical fabrication; photodetectors; semiconductor device measurement; 1550 nm; InGaAs-InP; afterpulsing; dark count rate; design; jitter; single-photon avalanche diode detector; single-photon detection efficiency; Absorption; Avalanche photodiodes; Circuit testing; Diodes; Envelope detectors; Fabrication; Indium gallium arsenide; Indium phosphide; Jitter; Temperature; Avalanche breakdown; avalanche photodiodes (APDs); photodetectors; photodiodes;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2006.871067

Filename

1610799