DocumentCode
882281
Title
High-performance transistors with arsenic-implanted polysil emitters
Author
Graul, Jürgen ; Glasl, Andreas ; Murrmann, Helmuth
Volume
11
Issue
4
fYear
1976
fDate
8/1/1976 12:00:00 AM
Firstpage
491
Lastpage
495
Abstract
Integrated high-frequency transistors (f/SUB T/>3 GHz) with an arsenic implanted polysil emitter have been investigated. The results are compared with data of bipolar transistors made with the conventional planar technique. It is shown that better emitter efficiency higher current carrying capability, and improved emitter-base breakdown can be achieved for transistors with polysil emitters.
Keywords
Bipolar transistors; Ion implantation; Semiconductor device manufacture; Semiconductor doping; bipolar transistors; ion implantation; semiconductor device manufacture; semiconductor doping; Bipolar transistors; Electric breakdown; Geometry; Ion implantation; Logic; Performance gain; Radiative recombination; Reproducibility of results; Semiconductor device doping; Silicon;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1976.1050764
Filename
1050764
Link To Document