DocumentCode
882290
Title
A new bipolar process-borsenic
Author
Saraswat, Krishna C. ; Meindl, James D.
Volume
11
Issue
4
fYear
1976
Firstpage
495
Lastpage
500
Abstract
A novel bipolar process, with arsenic emitters, has been developed. The base and the emitter are simultaneously diffused from an oxide source containing B/SUB 2/O/SUB 3/ and As/SUB 2/O/SUB 3/. Because of the slow diffusion of B in the presence of As, extremely shallow junctions have been obtained. n-p-n transistors with high h/SUB FE/, high breakdown, high f/SUB T/, and very little low current h/SUB FE/ falloff have been fabricated. Lateral p-n-p and p-channel JFET´s have also been fabricated on the same chip without any extra processing step.
Keywords
Bipolar transistors; Semiconductor device manufacture; bipolar transistors; semiconductor device manufacture; Ash; Boron; Electric breakdown; Fabrication; Frequency; Inductors; Integrated circuit technology; Oxidation; Temperature; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1976.1050765
Filename
1050765
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