DocumentCode :
882595
Title :
Tunnel Diode Delay-Line Memory
Author :
Harris, H.H., Jr. ; Pricer, W.D.
Author_Institution :
Components Division, IBM Corporation, Poughkeepsie, N.Y.
Issue :
3
fYear :
1964
fDate :
6/1/1964 12:00:00 AM
Firstpage :
269
Lastpage :
272
Abstract :
This paper describes a memory system wherein bits of information are stored serially in time on electrical delay lines, The simplicity and speed of the basic storage cell makes large high-speed stores of this sort feasible. The paper stresses the basic principles of operation. A brief description of one such system model built to demonstrate these principles is included.
Keywords :
Clocks; Delay effects; Delay lines; Fluctuations; Joining processes; Pulse amplifiers; Pulse circuits; Semiconductor diodes; Stress; Voltage;
fLanguage :
English
Journal_Title :
Electronic Computers, IEEE Transactions on
Publisher :
ieee
ISSN :
0367-7508
Type :
jour
DOI :
10.1109/PGEC.1964.263915
Filename :
4038153
Link To Document :
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