DocumentCode
882611
Title
Variation of velocity/field curve of GaAs in the temperature range 40--180°C
Author
Bostock, P.A. ; Walsh, Declan
Author_Institution
University of Oxford, Department of Engineering Science, Oxford, UK
Volume
5
Issue
24
fYear
1969
Firstpage
623
Lastpage
624
Abstract
A high-power microwave technique has been used to measure the velocity/field characteristic of GaAs. A small increase in the threshold field has been observed when the temperature was increased from 40°C to 180°C.
Keywords
III-V semiconductors; carrier mobility;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690465
Filename
4210684
Link To Document