• DocumentCode
    882611
  • Title

    Variation of velocity/field curve of GaAs in the temperature range 40--180°C

  • Author

    Bostock, P.A. ; Walsh, Declan

  • Author_Institution
    University of Oxford, Department of Engineering Science, Oxford, UK
  • Volume
    5
  • Issue
    24
  • fYear
    1969
  • Firstpage
    623
  • Lastpage
    624
  • Abstract
    A high-power microwave technique has been used to measure the velocity/field characteristic of GaAs. A small increase in the threshold field has been observed when the temperature was increased from 40°C to 180°C.
  • Keywords
    III-V semiconductors; carrier mobility;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19690465
  • Filename
    4210684