Title :
Electrical performance and reliability of tunnel magnetoresistance heads for 100-Gb/in2 application
Author :
Kuwashima, Tetsuya ; Fukuda, Kazumasa ; Kiyono, Hiroshi ; Sato, Kazuki ; Kagami, Takeo ; Saruki, Syunji ; Uesugi, Takumi ; Kasahara, Noriaki ; Ohta, Naoki ; Nagai, Kentaro ; Hachisuka, Nozomu ; Takahashi, Norio ; Naoe, Masamu ; Miura, Satoshi ; Barada, Ka
Author_Institution :
Head Bus. Group, TDK Corp., Nagano, Japan
Abstract :
Tunnel magnetoresistance (TuMR) heads are attractive candidates for future high-density recording. To achieve the high areal density, it is necessary for TuMR heads to get lower resistance and higher delta R/R film. A low resistance and high delta R/R tunneling junction film has been developed and used for this study. The resistance area product and delta R/R are 3 Ω·μm2 and 18%, respectively. Reliability that includes lifetime was also studied. We have found TuMR heads can be a promising candidate for 100 Gb/in2 application.
Keywords :
circuit reliability; magnetic heads; magnetic recording; tunnelling magnetoresistance; 1-f noise; TuMR heads; areal density; current-perpendicular-to-plane geometry; delta R/R film; electric properties; electrical performance; high-density recording; lifetime; resistance area product; shot noise; tunnel giant magnetoresistance; tunnel magnetoresistance heads reliability; tunneling junction film; Electric resistance; Giant magnetoresistance; Magnetic heads; Magnetic noise; Magnetic recording; Magnetic tunneling; Perpendicular magnetic recording; Production; Signal to noise ratio; Tunneling magnetoresistance;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2003.821203
