Title :
Two-dimensional analysis of double-gate m.o.s. transistor
Author :
Armstrong, G.A. ; Magowan, J.A. ; Burt, D.J.
Author_Institution :
Queen´s University of Belfast, Department of Electrical Engineering, Belfast, UK
Abstract :
The principles of a new form of cascode m.o.s. device are discussed. A method of analysis for the derivation of d.c. characteristics is provided. Theoretical results have been validated by comparison with those of a practical device.
Keywords :
metal-insulator-semiconductor devices; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19690474
