Title :
Effects of temperature on contact resistance of Gunn diodes
Author :
Bolton, R.M.G. ; Jones, B.F.
Author_Institution :
University of Oxford, Department of Engineering Science, Oxford, UK
Abstract :
Two different sets of experiments on the effect of temperature on Gunn diodes with Ag-Sn metal contacts have indicated the presence of a contact resistance which can be characterised by an activation energy. A model based on the diffusion of copper into the active region is put forward to account for the origin of the contact resistance and its variation with temperature.
Keywords :
Gunn devices; copper; diffusion in solids; electrical contacts; semiconductor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19690495
