DocumentCode
882905
Title
Effects of temperature on contact resistance of Gunn diodes
Author
Bolton, R.M.G. ; Jones, B.F.
Author_Institution
University of Oxford, Department of Engineering Science, Oxford, UK
Volume
5
Issue
25
fYear
1969
Firstpage
662
Lastpage
663
Abstract
Two different sets of experiments on the effect of temperature on Gunn diodes with Ag-Sn metal contacts have indicated the presence of a contact resistance which can be characterised by an activation energy. A model based on the diffusion of copper into the active region is put forward to account for the origin of the contact resistance and its variation with temperature.
Keywords
Gunn devices; copper; diffusion in solids; electrical contacts; semiconductor diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690495
Filename
4210713
Link To Document