• DocumentCode
    883025
  • Title

    Iterative scheme for 1- and 2- dimensional d.c.-transistor simulation

  • Author

    Slotboom, J.W.

  • Author_Institution
    Philips Research Laboratories, NV Philips´´ Gloeilampenfabrieken, Eindhoven, Netherlands
  • Volume
    5
  • Issue
    26
  • fYear
    1969
  • Firstpage
    677
  • Lastpage
    678
  • Abstract
    A numerical iterative scheme is presented for the solution of the 1- and 2-dimensional semiconductor d.c. transport equations. This scheme is applied to an n-p-n transistor structure. Input data are geometry, doping profile, boundary conditions and, optionally, mobility dependencies and generation-recombination law.
  • Keywords
    semiconductor devices; transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19690510
  • Filename
    4210724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=883025