Integrated optical detector array, waveguide, and modulator based on silicon technology

An integrated optical (IO) hybrid circuit consisting of a photodetector array, waveguide, and acousto-optic modulator on a common silicon substrate has been fabricated. This IO hybrid circuit is a major step in the development of a combination optical-electronic processing system. In this device an array of p-n junction photodiodes was fabricated on a 2-in silicon wafer and a 7059 glass waveguide film sputtered over an SiO/SUB 2/ insulating layer on the wafer. Another SiO/SUB 2/ layer was deposited under the transducer electrode. The transducer was a 40-MHz lithium niobate rotated Y-cut crystal. A prism was used to couple in the light beam from a 5 mW He-Ne laser. The guided light beam was directed at one of the diodes in the array and pulsed RF signals were applied to the transducer. Oscillator frequencies of 40 MHz and 120 MHz were separately applied. Modulation depths of greater than 25 percent were produced. The fabrication of the optical guide photodiode and electrical interconnections on a single silicon wafer utilized standard IC fabrication techniques.