• DocumentCode
    883089
  • Title

    Experimental confirmation of an analytical model for charge transfer in charge-coupled devices

  • Author

    Scott, David B. ; Chamberlain, Savvas G.

  • Volume
    12
  • Issue
    1
  • fYear
    1977
  • fDate
    2/1/1977 12:00:00 AM
  • Firstpage
    45
  • Lastpage
    50
  • Abstract
    An analytical model for the charge loss as a function of transfer time under low charge levels in surface channel charge-coupled devices has been theoretically determined and experimentally confirmed. The model includes the effect of surface states. A new method of measuring charge transfer makes it possible to determine the role that surface states play in the degradation of signal charge transfer.
  • Keywords
    Charge-coupled devices; charge-coupled devices; Analytical models; Boundary conditions; Charge measurement; Charge transfer; Current density; Current measurement; Degradation; Differential equations; Electron mobility; Potential well;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1977.1050839
  • Filename
    1050839
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=883089