DocumentCode :
883089
Title :
Experimental confirmation of an analytical model for charge transfer in charge-coupled devices
Author :
Scott, David B. ; Chamberlain, Savvas G.
Volume :
12
Issue :
1
fYear :
1977
fDate :
2/1/1977 12:00:00 AM
Firstpage :
45
Lastpage :
50
Abstract :
An analytical model for the charge loss as a function of transfer time under low charge levels in surface channel charge-coupled devices has been theoretically determined and experimentally confirmed. The model includes the effect of surface states. A new method of measuring charge transfer makes it possible to determine the role that surface states play in the degradation of signal charge transfer.
Keywords :
Charge-coupled devices; charge-coupled devices; Analytical models; Boundary conditions; Charge measurement; Charge transfer; Current density; Current measurement; Degradation; Differential equations; Electron mobility; Potential well;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1977.1050839
Filename :
1050839
Link To Document :
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