Title :
Experimental confirmation of an analytical model for charge transfer in charge-coupled devices
Author :
Scott, David B. ; Chamberlain, Savvas G.
fDate :
2/1/1977 12:00:00 AM
Abstract :
An analytical model for the charge loss as a function of transfer time under low charge levels in surface channel charge-coupled devices has been theoretically determined and experimentally confirmed. The model includes the effect of surface states. A new method of measuring charge transfer makes it possible to determine the role that surface states play in the degradation of signal charge transfer.
Keywords :
Charge-coupled devices; charge-coupled devices; Analytical models; Boundary conditions; Charge measurement; Charge transfer; Current density; Current measurement; Degradation; Differential equations; Electron mobility; Potential well;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050839