A Low-Noise Four-Stage Voltage-Controlled Ring Oscillator in Deep-Submicrometer CMOS Technology

Author

Joo-Myoung Kim ; Seungjin Kim ; In-Young Lee ; Seok-Kyun Han ; Sang-Gug Lee

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

60

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

71

Lastpage

75

Abstract

This brief presents a low-voltage and low-noise ring voltage-controlled oscillator (VCO) where the phase noise performance is improved by reducing the total channel thermal noise injected into the output node of the VCO during the transition period of the output voltage swing. Implemented in a 65-nm CMOS technology, the proposed ring VCO operates from 485.7 to 1011.6 MHz. At 645 MHz, the measured phase noise is -110.8 dBc/Hz at an offset of 1 MHz while dissipating 10 mW from a 1-V supply.

Keywords

CMOS integrated circuits; phase noise; voltage-controlled oscillators; VCO; deep-submicrometer CMOS technology; frequency 485.7 MHz to 1011.6 MHz; low-noise four-stage voltage-controlled ring oscillator; phase noise; size 65 nm; CMOS integrated circuits; Delay; Phase noise; Ring oscillators; Voltage-controlled oscillators; Phase noise; ring oscillator; transition period; voltage-controlled oscillator (VCO);

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2012.2235734

Filename

6477094