Influence of transistor parameters on the noise margin of organic digital circuits

Author

De Vusser, Stijn ; Genoe, Jan ; Heremans, Paul

Author_Institution

Interuniversity Microelectron. Center, Leuven, Belgium

Volume

53

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

601

Lastpage

610

Abstract

The concept of noise margin is crucial in the design and operation of digital logic circuits. Analytical expressions for the transfer curves of an inverter based on two depletion-mode p-type organic thin-film transistors (OTFTs) were calculated. Based on these expressions, the values for the noise margin of organic-based inverters were calculated. In this paper, the influence of the OTFT parameters on the noise margin is presented. Knowing that statistical variations of the transistor parameters are inherent to OTFT technology, these statistical variations are also taken into account. Finally, a circuit yield analysis is presented.

Keywords

integrated circuit noise; integrated circuit yield; logic circuits; logic design; statistical analysis; thin film transistors; OTFT parameters; OTFT technology; circuit yield analysis; digital logic circuits; noise margin; organic digital circuits; organic thin-film transistors; organic-based inverters; statistical variations; transfer curves; transistor parameters; Circuit analysis; Circuit noise; Digital circuits; Inverters; Logic circuits; Low voltage; Noise robustness; Organic light emitting diodes; Organic thin film transistors; Thin film transistors; Digital circuit robustness; noise margin; organic thin-film transistors (OTFTs); yield;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.870876

Filename

1610885