Title :
Vapour growth of multilayered GaAs structures for series operation of transferred-electron oscillators
Author :
Enstrom, R.E. ; Reynolds, J.F. ; Berson, B.E.
Author_Institution :
RCA Laboratories, David Sarnoff Research Center, Princeton, USA
Abstract :
Series operation of GaAs transferred-electron oscillators has been obtained by the in situ vapour growth of n+¿n¿n+¿n¿n+ structures. Devices fabricated from this structure have operated at n/f ratios as high as 3.2 × 105 s cm¿3 and have yielded conversion efficiencies as high as 13.5% at 4.0 GHz.
Keywords :
III-V semiconductors; gallium arsenide; microwave oscillators; oscillators; semiconductor devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19690535
