DocumentCode :
883278
Title :
Gate leakage currents in MOS field-effect transistors
Author :
Kennedy, Edward J.
Volume :
54
Issue :
8
fYear :
1966
Firstpage :
1098
Lastpage :
1099
Keywords :
Current measurement; Detectors; Dielectric measurements; FETs; Leak detection; Leakage current; MOSFETs; Optical receivers; Temperature; Thermal resistance;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.5023
Filename :
1446953
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=883278
