DocumentCode
883284
Title
A new high speed I/sup 2/L structure
Author
Roesner, Bruce B. ; McGreivy, D.J.
Volume
12
Issue
2
fYear
1977
fDate
4/1/1977 12:00:00 AM
Firstpage
114
Lastpage
118
Abstract
A new improved I/SUP 2/L structure is discussed which has been shown to operate at high speeds with large fan-out capabilities while retaining low power operation. The new `up-diffused´ structure is fabricated in such a fashion that Schottky diodes can be readily incorporated. With the addition of Schottky clamps between the collector and base of the n-p-n switching transistor, gate delays as low as 2.5 ns have been achieved.
Keywords
Bipolar integrated circuits; Integrated logic circuits; bipolar integrated circuits; integrated logic circuits; Circuits; Delay; Doping profiles; Electrons; Impurities; Laboratories; Logic; Schottky diodes; Switches; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1977.1050857
Filename
1050857
Link To Document