DocumentCode :
88329
Title :
Field-Programmable LNAs With Interferer-Reflecting Loop for Input Linearity Enhancement
Author :
Jianxun Zhu ; Krishnaswamy, Harish ; Kinget, Peter R.
Author_Institution :
Columbia Univ., New York, NY, USA
Volume :
50
Issue :
2
fYear :
2015
fDate :
Feb. 2015
Firstpage :
556
Lastpage :
572
Abstract :
A field-programmable (FP) low-noise amplifier (LNA) with interferer-reflecting (IR) loop is introduced. The user can program its gain, noise figure, linearity and power consumption during operation. The IR loop uses a frequency-selective shunt-shunt feedback around the noise-canceling LNA to reduce the input impedance out of band and to suppress the input voltage swing created by blockers. A notch filter at the desired operation frequency in the feedback path results in selectivity at the RF input so that all out-of-band blockers are suppressed without the need to know blocker locations and the LNA input linearity is improved. 65 nm CMOS chip prototypes have been implemented with on-chip LC, bondwire LC or N-path notch filters. The FP N-path IR-LNA operates from 0.2 to 1.6 GHz; with the IR disabled, the NF is 2.4 dB, B1 dB is -15 dBm, and the OOB-IIP3 is +2.5 dBm with a 13 mW power consumption; with the IR on, the NF is 3.6 dB, the RF channel input bandwidth is 20 MHz, the B1 dB is -4 dBm and the OOB-IIP3 is +14.5 dBm. The LNA has an analog VDD of 1.6 V and an LO VDD of 1 V and dissipates 15.8 to 20.2 mW across operating frequencies.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; circuit feedback; interference suppression; low noise amplifiers; notch filters; CMOS chip prototypes; FP N-path IR-LNA; IR loop; N-path notch filters; RF channel input bandwidth; RF input; bandwidth 20 MHz; bondwire LC; field-programmable low-noise amplifier; frequency 0.2 GHz to 1.6 GHz; frequency-selective shunt-shunt feedback; input impedance out of band reduction; input linearity enhancement; input voltage swing suppression; interferer-reflecting loop; noise figure 2.4 dB; noise figure 3.6 dB; noise-canceling LNA; on-chip LC; power 13 mW to 20.2 mW; power consumption; size 65 nm; voltage 1 V; voltage 1.6 V; Gain; Impedance; Impedance matching; Linearity; Noise; Radio frequency; Wideband; Bondwire filter; CMOS; LNA; LNA linearization; N-path filter; feedback loop; field programmable; high linearity; interferer reflection; low power; low-noise amplifiers; radio-frequency integrated circuits;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2014.2364835
Filename :
6982232
Link To Document :
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